Aligned Sub-10-nm Block Copolymer Patterns Templated by Post Arrays

被引:71
作者
Chang, Jae-Byum [2 ]
Son, Jeong Gon [2 ]
Hannon, Adam F. [2 ]
Alexander-Katz, Alfredo [2 ]
Ross, Caroline A. [2 ]
Berggren, Karl K. [1 ]
机构
[1] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA
[2] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
基金
美国国家科学基金会;
关键词
block copolymer; self-assembly; templated self-assembly; nanolithography; line pattern; high throughput; LITHOGRAPHY; NANOSTRUCTURES; DENSITY;
D O I
10.1021/nn203767s
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Self-assembly of block copolymer films can generate useful periodic nanopatterns, but the self-assembly needs to be templated to impose long-range order and to control pattern registration with other substrate features. We demonstrate here the fabrication of aligned sub-10-nm line width patterns with a controlled orientation by using lithographically formed post arrays as templates for a 16 kg/mol poly(styrene-block-dimethylsiloxane) (PS-b-PDMS) diblock copolymer. The in-plane orientation of the block copolymer cylinders was controlled by varying the spacing and geometry of the posts, and the results were modeled using 3D self-consistent field theory. This work illustrates how arrays of narrow lines with specific in-plane orientation can be produced, and how the post height and diameter affect the self-assembly.
引用
收藏
页码:2071 / 2077
页数:7
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