Dense self-assembly on sparse chemical patterns: Rectifying and multiplying lithographic patterns using block copolymers

被引：305

作者：

Cheng, Joy Y. ^{[1
]}

Rettner, Charles T. ^{[1
]}

Sanders, Daniel P. ^{[1
]}

Kim, Ho-Cheol ^{[1
]}

Hinsberg, William D. ^{[1
]}

机构：

[1] IBM Corp, Almaden Res Ctr, San Jose, CA 95120 USA

来源：

ADVANCED MATERIALS | 2008年 / 20卷 / 16期

关键词：

D O I：

10.1002/adma.200800826

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A lithography-friendly self-assembly process which multiplies and rectifies an existing resist patterns is demonstrated here. A polymer film (right figure) has assembled at a 14 nm half-pitch on a thin resist pattern at twice the period (left figure). This directed self-assembly process dramatically heals defects and reduces feature size variation of the ill-defined resist patterns.

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收藏

页码：3155 / 3158

页数：4

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