Polymer self assembly in semiconductor microelectronics

被引:381
作者
Black, C. T. [1 ]
Ruiz, R.
Breyta, G.
Cheng, J. Y.
Colburn, M. E.
Guarini, K. W.
Kim, H.-C.
Zhang, Y.
机构
[1] Brookhaven Natl Lab, Ctr Funct Nanomat, Upton, NY 11973 USA
[2] Hitachi Global Storage Technol, San Jose, CA 95135 USA
[3] IBM Res Corp, Almaden Res Ctr, IBM Res Div, San Jose, CA 95120 USA
[4] IBM Corp, Thomas J Watson Res Ctr, IBM Res Div, Yorktown Hts, NY 10598 USA
[5] IBM Syst & Technol Grp, Poughkeepsie, NY 12601 USA
关键词
D O I
10.1147/rd.515.0605
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
We are inspired by the beauty, and simplicity of self-organizing materials and the promise they hold for enabling continued improvementsi in semiconductor technology. Self assembly is the spontaneous arrangement of individual elements into regular patterns; under suitable conditions, certain materials self organize nanometer-scale patterns of importance to high-performance microelectronics applications. Polymer self assembly is a nontraditional approach to patterning integrated circuit elements at dimensions and densities inaccessible to traditional lithography methods. We review here our efforts in IBM to develop and integrate self-assembly processes as high-resolution patterning alternatives and to demonstrate targeted applications in semiconductor device,fabrication. We also provide a framework for understanding key requirenients for the adoption of polymer self-assembly processes into semiconductor technology, as well as a discussion of the ultimate dimensional scalability of the technique.
引用
收藏
页码:605 / 633
页数:29
相关论文
共 185 条
  • [1] SCHOTTKY-BARRIER HEIGHTS OF TI AND TISI2 ON N-TYPE AND P-TYPE SI(100)
    ABOELFOTOH, MO
    TU, KN
    [J]. PHYSICAL REVIEW B, 1986, 34 (04): : 2311 - 2318
  • [2] NEUTRON REFLECTIVITY STUDIES OF THE SURFACE-INDUCED ORDERING OF DIBLOCK COPOLYMER FILMS
    ANASTASIADIS, SH
    RUSSELL, TP
    SATIJA, SK
    MAJKRZAK, CF
    [J]. PHYSICAL REVIEW LETTERS, 1989, 62 (16) : 1852 - 1855
  • [3] THE MORPHOLOGY OF SYMMETRIC DIBLOCK COPOLYMERS AS REVEALED BY NEUTRON REFLECTIVITY
    ANASTASIADIS, SH
    RUSSELL, TP
    SATIJA, SK
    MAJKRZAK, CF
    [J]. JOURNAL OF CHEMICAL PHYSICS, 1990, 92 (09) : 5677 - 5691
  • [4] Macroscopic orientation of block copolymer cylinders in single-layer films by shearing
    Angelescu, DE
    Waller, JH
    Adamson, DH
    Deshpande, P
    Chou, SY
    Register, RA
    Chaikin, PM
    [J]. ADVANCED MATERIALS, 2004, 16 (19) : 1736 - +
  • [5] [Anonymous], 2005, INT TECHN ROADM SEM
  • [6] Shear ordering in thin films of spherical block copolymer
    Arya, G
    Rottler, J
    Panagiotopoulos, AZ
    Srolovitz, DJ
    Chaikin, PM
    [J]. LANGMUIR, 2005, 21 (24) : 11518 - 11527
  • [7] Nanopatterning with microdomains of block copolymers using reactive-ion etching selectivity
    Asakawa, K
    Hiraoka, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (10): : 6112 - 6118
  • [8] Nano-patterning for patterned media using block-copolymer
    Asakawa, K
    Hiraoka, T
    Hieda, H
    Sakurai, M
    Kamata, Y
    [J]. JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2002, 15 (03) : 465 - 470
  • [9] Confined thin film diblock copolymer in the presence of an electric field
    Ashok, B
    Muthukumar, M
    Russell, TP
    [J]. JOURNAL OF CHEMICAL PHYSICS, 2001, 115 (03) : 1559 - 1564
  • [10] Material witness - Silicon still supreme
    Ball, P
    [J]. NATURE MATERIALS, 2005, 4 (02) : 119 - 119