Fabrication of nanostructures with long-range order using block copolymer lithography

被引:378
作者
Cheng, JY [1 ]
Ross, CA
Thomas, EL
Smith, HI
Vancso, GJ
机构
[1] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
[2] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA
[3] Univ Twente, MESA Res Inst, Dept Mat Sci & Technol Polymers, NL-7500 AE Enschede, Netherlands
关键词
D O I
10.1063/1.1519356
中图分类号
O59 [应用物理学];
学科分类号
摘要
Block copolymer lithography makes use of the self-assembling properties of block copolymers to pattern nanoscale features over large areas. Although the resulting patterns have good short-range order, the lack of long-range order limits their utility in some applications. This work presents a lithographically assisted self-assembly method that allows ordered arrays of nanostructures to be formed by spin casting a block copolymer over surfaces patterned with shallow grooves. The ordered block copolymer domain patterns are then transferred into an underlying silica film using a single etching step to create a well-ordered hierarchical structure consisting of arrays of silica pillars with 20 nm feature sizes and aspect ratios greater than 3. (C) 2002 American Institute of Physics.
引用
收藏
页码:3657 / 3659
页数:3
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