Fabrication of regularly arranged nanocolumns on diamond(100) using micellar masks

被引:27
作者
Koslowski, B [1 ]
Strobel, S
Herzog, T
Heinz, B
Boyen, HG
Notz, R
Ziemann, P
Spatz, JP
Möller, M
机构
[1] Univ Ulm, Abt Festkorperphys, D-89069 Ulm, Germany
[2] Univ Ulm, Abt Organ Chem 3, D-89069 Ulm, Germany
关键词
D O I
10.1063/1.373019
中图分类号
O59 [应用物理学];
学科分类号
摘要
Cylindrical diamond columns of 15 nm height and 10 nm diameter have been prepared on a diamond(100) substrate by exploiting the self-organization of metal-loaded diblock copolymers. For this purpose, chemomechanically polished substrates of synthetic (high pressure high temperature) diamond exhibiting extremely low roughness (typical root-mean-square roughness 60 pm) were covered by a monolayer of gold-loaded inverse polystyrene-block-poly(2-vinylpyridine) micelles which self-organize in an hexagonal order on the substrate. After burning off the blockcopolymer in an oxygen plasma, the resulting Au nanoparticles act as a mask during further etching the diamond substrate in this plasma. As a result, Au-capped diamond columns are formed with an approximate size of the former gold particles. After removing the Au caps by evaporation at 1100 degrees C in ultrahigh vacuum, an array of diamond nanocolumns is obtained. As a consequence of this preparation process, the columns form an hexagonal lattice with a separation of 85 nm reflecting the arrangement of the self-organized micelles. The successive states of sample preparation were characterized by atomic force microscopy, Rutherford backscattering, and in situ scanning tunneling microscopy. (C) 2000 American Institute of Physics. [S0021-8979(00)02510-4].
引用
收藏
页码:7533 / 7538
页数:6
相关论文
共 30 条
  • [1] Bhushan B., 1994, Diamond Films and Technology, V4, P71
  • [2] ECR plasma polishing of CVD diamond films
    BuchkremerHermanns, H
    Long, C
    Weiss, H
    [J]. DIAMOND AND RELATED MATERIALS, 1996, 5 (6-8) : 845 - 849
  • [3] Fabrication of gated nanosize Si-tip arrays for high perveance electron beam applications
    Choi, SS
    Lim, SH
    Kim, DW
    Jung, MY
    Jeon, H
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (02): : 583 - 587
  • [4] Coll BF, 1998, MATER RES SOC SYMP P, V498, P185
  • [5] Electron affinity of the bare and hydrogen covered single crystal diamond (111) surface
    Cui, JB
    Ristein, J
    Ley, L
    [J]. PHYSICAL REVIEW LETTERS, 1998, 81 (02) : 429 - 432
  • [6] Nano-lithography by electron exposure using an Atomic Force Microscope
    Davidsson, P
    Lindell, A
    Mäkelä, T
    Paalanen, M
    Pekola, J
    [J]. MICROELECTRONIC ENGINEERING, 1999, 45 (01) : 1 - 8
  • [7] Atomic force microscopy study of atomically flat (001) diamond surfaces treated with hydrogen plasma
    Hayashi, K
    Yamanaka, S
    Watanabe, H
    Sekiguchi, T
    Okushi, H
    Kajimura, K
    [J]. APPLIED SURFACE SCIENCE, 1998, 125 (01) : 120 - 124
  • [8] Planarization of diamond thin film surfaces by ion beam etching at grazing incidence angle
    Ilias, S
    Sene, G
    Moller, P
    Stambouli, V
    Pascallon, J
    Bouchier, D
    Gicquel, A
    Tardieu, A
    Anger, E
    Ravet, MF
    [J]. DIAMOND AND RELATED MATERIALS, 1996, 5 (6-8) : 835 - 839
  • [9] On the roughness of hydrogen-plasma treated diamond(100) surfaces
    Koslowski, B
    Strobel, S
    Wenig, MJ
    Martschat, R
    Ziemann, P
    [J]. DIAMOND AND RELATED MATERIALS, 1998, 7 (2-5) : 322 - 326
  • [10] Roughness transitions of diamond(100) induced by hydrogen-plasma treatment
    Koslowski, B
    Strobel, S
    Wenig, MJ
    Ziemann, P
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 66 (Suppl 1): : S1159 - S1163