Quasi three-dimensional simulation for thin film polycrystalline silicon solar cells

被引：2

作者：

Ishikawa, Y ^{[1
]}

Yamamoto, Y ^{[1
]}

Hatayama, T ^{[1
]}

Uraoka, Y ^{[1
]}

Fuyuki, T ^{[1
]}

机构：

[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300101, Japan

来源：

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000 | 2000年

关键词：

D O I：

10.1109/PVSC.2000.915813

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Optimum designs of cell configuration and polycrystalline silicon (poly-Si) grown by atmospheric pressure chemical vapor deposition (APCVD) have been demonstrated. In order to realize high-efficiency thin film poly-Si solar cells, a novel method of quasi three-dimensional simulation using a cylindrical coordinate system was carried out. Grain boundaries interface recombination velocity based on the simulation should be less than 10(3)cm/s. Even at a relatively short diffusion length of L-n=50 mum, high efficiency larger than 16% will be expected at a thickness of 5-20 am. Poly-Si films with columnar diameter of around 5 um were successfully deposited on foreign substrates with APCVD at a high growth rate of 0.8 mum/min.

引用

页码：280 / 283

页数：4

共 11 条

[1] Modeling light trapping and electronic transport of waffle-shaped crystalline thin-film Si solar cells [J].