Liner-supported cylinder (LSC) technology to realize Ru/Ta2O5/Ru capacitor for future DRAMs

被引：14

作者：

Fukuzumi, Y ^{[1
]}

Suzuki, T ^{[1
]}

Sato, A ^{[1
]}

Ishibashi, Y ^{[1
]}

Hatada, A ^{[1
]}

Nakamura, K ^{[1
]}

Tsunoda, K ^{[1
]}

Fukuda, M ^{[1
]}

Lin, J ^{[1
]}

Nakabayashi, M ^{[1
]}

Minakata, H ^{[1
]}

Shimada, A ^{[1
]}

Kurahashi, T ^{[1
]}

Tomita, H ^{[1
]}

Matsunaga, D ^{[1
]}

Hieda, K ^{[1
]}

Hashimoto, K ^{[1
]}

Nakamura, S ^{[1
]}

Kohyama, SNY ^{[1
]}

机构：

[1] Toshiba Co Ltd, Memory LSI R&D Ctr, Isogo Ku, Yokohama, Kanagawa 2358522, Japan

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST | 2000年

关键词：

D O I：

10.1109/IEDM.2000.904437

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The concept of liner-supported cylinder (LSC) technology to realize robust formation of cylindrical electrodes with Ru, which has advantages to bring out the best of Ta2O5 performance, is described. With experimental results including DRAM functionality, we show that LSC-Ta2O5 capacitor is a promising candidate to realize 0.10um DRAMs and beyond.

引用

页码：793 / 796

页数：4

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