A high-speed thermal imaging system for semiconductor device analysis

被引：13

作者：

Hefner, A ^{[1
]}

Berning, D ^{[1
]}

Blackburn, D ^{[1
]}

Chapuy, C ^{[1
]}

Bouché, S ^{[1
]}

机构：

[1] NIST, Div Semicond Elect, Gaithersburg, MD 20899 USA

来源：

SEVENTEENTH ANNUAL IEEE SEMICONDUCTOR THERMAL MEASUREMENT AND MANAGEMENT SYMPOSIUM, PROCEEDINGS 2001 | 2001年

关键词：

D O I：

10.1109/STHERM.2001.915143

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new high-speed transient thermal imaging system is presented that provides the capability to measure the transient temperature distributions on the surface of a semiconductor chip with 1-mus time, and 15-mum spatial resolution. The system uses virtual instrument graphical user interface software that controls an infrared thermal microscope, translation stages, digitizing oscilloscope, and a device test fixture temperature controller. The computer interface consists of a front panel for viewing the temperature distribution and includes a movie play-back feature that enables viewing of the temperature distribution versus time. The computer user interface also has a sub-panel for emissivity mapping and calibration of the infrared detector. The utility of the system is demonstrated in this paper using a bipolar transistor hotspot current constriction process.

引用

页码：43 / 49

页数：7

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