Reduction of reset current in NiO-ReRAM brought about by ideal current limiter

被引：16

作者：

Kinoshita, K. ^{[1
]}

Tsunoda, K. ^{[1
]}

Sato, Y. ^{[1
]}

Noshiro, H. ^{[1
]}

Yamazaki, Y. ^{[1
]}

Fukano, T. ^{[1
]}

机构：

[1] FUJITSU LAB LTD, 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430197, Japan

来源：

2007 22ND IEEE NON-VOLATILE SEMICONDUCTOR MEMORY WORKSHOP | 2007年

关键词：

D O I：

10.1109/NVSMW.2007.4290583

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：66 / +

页数：2

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