Remote deposition of scratch resistant films by use of slot antenna microwave plasma source

被引:12
作者
Korzec, D
Traub, K
Werner, F
Engemann, J
机构
[1] Microstructure Research Center - fmt, University of Wuppertal, 42287 Wuppertal
关键词
plasma processing and deposition; silicon oxide;
D O I
10.1016/0040-6090(96)08595-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The slot antenna microwave plasma source is used for remote plasma deposition of scratch resistant films on polycarbonate substrates. A grid separates the primary discharge from the process chamber. The monomer hexamethyldisiloxan is distributed 5-50 mm over the substrate positioned 5-25 cm from the separation grid. With argon in the primary discharge a good sticking interface polymer layer grows. An additional amount of oxygen leads to a quartzlike layer on top. Deposition rate is typically 0.5 mu m/min. Rubber and tumble abrasion tests are used to characterise the scratch resistance.
引用
收藏
页码:143 / 145
页数:3
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