DEPOSITION OF ALUMINUM NITRIDE BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION USING TRIISOBUTYL ALUMINUM

被引：13

作者：

MATSUMOTO, A

MEIKLE, S

NAKANISHI, Y

HATANAKA, Y

机构：

[1] Research Institute of Electronics, Shizuoka University, Hamamatsu, 432

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 4A期

关键词：

ALUMINUM NITRIDE; THIN-FILM DEPOSITION; TRIISOBUTYL ALUMINUM; REMOTE PLASMA; PLASMA-ENHANCED CVD; AFTERGLOW; MICROWAVE PLASMA; CHEMILUMINESCENCE SPECTRA;

D O I：

10.1143/JJAP.31.L423

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Aluminum nitride thin-film deposition resulting from addition of triisobutyle aluminum (TIBA) to the afterglow of an N2 microwave plasma has been investigated. Chemiluminescence spectra of the downstream reaction indicated that the substrate temperature is one parameter for the decomposition of TIBA. The activation energy for plasma-assisted TIBA decomposition is also evaluated by the chemiluminescence spectra and found to be about 14.8 kJ/mol.

引用

页码：L423 / L425

页数：3

共 11 条

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