The formation, dissociation and electrical activity of divacancy-oxygen complexes in Si

被引：17

作者：

Coutinho, J ^{[1
]}

Jones, R

Öberg, S

Briddon, PR

机构：

[1] Univ Aveiro, Dept Phys, P-3810 Aveiro, Portugal

[2] Univ Exeter, Sch Phys, Exeter EX4 4QL, Devon, England

[3] Lulea Univ Technol, Dept Math, S-97187 Lulea, Sweden

[4] Newcastle Univ, Sch Nat Sci, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England

来源：

PHYSICA B-CONDENSED MATTER | 2003年 / 340卷

关键词：

silicon; radiation damage; divacancy; oxygen;

D O I：

10.1016/j.physb.2003.09.143

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Density functional calculations are carried out on divacancy-oxygen (V2O and V2O2) complexes in silicon, paying particular attention to their formation and dissociation mechanisms as well as their electrical activity. The formation of V2O around 220degreesC is controlled by the diffusion of V-2 to immobile oxygen traps, while it dissociates around 300degreesC into VO and V.V2O and V2O2 are found to possess deep single and double acceptor levels as well as deep donor levels similar to those of V, (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：523 / 527

页数：5

共 24 条

[1] PSEUDOPOTENTIALS THAT WORK - FROM H TO PU [J].