Ga-doped ZnS nanowires as precursors for ZnO/ZnGa2O4 nanotubes

被引：40

作者：

Gautam, Ujjal K. ^{[1
]}

Bando, Yoshio ^{[1
]}

Zhan, Jinhua ^{[1
,2
]}

Costa, Pedro M. F. J. ^{[1
]}

Fang, Xiaosheng ^{[1
]}

Golberg, Dmitri ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Nanoscale Mat Ctr, Tsukuba, Ibaraki 3050044, Japan

[2] Shandong Univ, Dept Chem, Minist Educ, Key Lab Colloid & Interface Chem, Jinan 250100, Peoples R China

来源：

ADVANCED MATERIALS | 2008年 / 20卷 / 04期

关键词：

D O I：

10.1002/adma.200701761

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Ga-doped ZnS nanowires are used as precursors for the preparation of ZnO/ZnGa2O4 composite nanotubes, as shown in the figure. Oxidation of the nanowires induces phase separation resulting in the formation of ZnO/ ZnGa2O4 phosphor heterostructures. The nanowires essentially serve as both precursors and templates for the fabrication of the nanotubes.

引用

页码：810 / +

页数：6

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