Growth of 6H and 4H-SiC by sublimation epitaxy

被引：80

作者：

Syväjärvi, M

Yakimova, R

Tuominen, M

Kakanakova-Georgieva, A

MacMillan, MF

Henry, A

Wahab, Q

Janzén, E

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

[2] Okmet AB, S-17824 Ekero, Sweden

[3] Univ Sofia, Fac Phys, BU-1126 Sofia, Bulgaria

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 197卷 / 1-2期

关键词：

SiC; morphology; growth rate; purity;

D O I：

10.1016/S0022-0248(98)00890-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The epitaxial sublimation growth process of SIC has been investigated. Layers with specular surfaces and growth rates up to 2 mm/h have been obtained. No step bunching is observed by optical microscopy even on very thick layers which indicates a stable step growth mechanism. Under certain growth conditions the morphology degrades. The morphological stability is investigated and discussed in relation to the growth kinetics. Impurities in the epitaxial layers are investigated by secondary ion mass spectroscopy and low-temperature photoluminescence. The carrier concentration is measured by capacitance-voltage measurements. The structural quality of the grown material is improved compared to the substrate as shown by X-ray diffraction measurements. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：155 / 162

页数：8

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