High growth rate of α-SiC by sublimation epitaxy

被引：14

作者：

Syvajarvi, M ^{[1
]}

Yakimova, R

MacMillan, MF

Tuominen, M

Kakanakova-Georgieva, A

Hemmingsson, CG

Ivanov, IG

Janzen, E

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

[2] Outokumpu Semitron, S-17824 Ekero, Sweden

[3] Univ Sofia, Fac Phys, BG-1126 Sofia, Bulgaria

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

growth rate; morphology; sublimation; epitaxy; growth mechanism;

D O I：

10.4028/www.scientific.net/MSF.264-268.143

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The growth of 6H and 4H-SiC by the sublimation epitaxy method is described. Growth rates up to 400 mu m/hour have been obtained. The surfaces of the layers are specular with no observation of step-bunching. The growth mode is most probably a step growth mechanism. Low-temperature photoluminescence and C-V measurements indicate that a reasonable purity is achieved. The structural quality of the grown material is improved compared to the substrate as shown by X-ray diffraction measurements.

引用

页码：143 / 146

页数：4

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