Reactive pulsed laser ablation and deposition of thin indium tin oxide films for solid state compact sensors

被引：27

作者：

Teghil, R

Marotta, V

Guidoni, AG

Di Palma, TM

Flamini, C

机构：

[1] Univ Basilicata, Dipartimento Chim, I-85100 Potenza, Italy

[2] Ist Mat Speciali CNR, Tito Scalo, PZ, Italy

[3] Univ La Sapienza, Dipartimento Chim, I-00185 Rome, Italy

来源：

APPLIED SURFACE SCIENCE | 1999年 / 138卷

关键词：

indium tin oxide; laser ablation; film deposition; sensors;

D O I：

10.1016/S0169-4332(98)00448-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Thin indium tin oxide (TTO) films have been deposited on Si (100) substrates by laser ablating pure metals in oxygen atmosphere. The ablation has been carried out by a frequency doubled Nd:YAC laser and the oxygen pressure has been varied between 50 and 500 Pa. The substrate temperature has been varied from 25 to 700 degrees C. The gaseous phase has been studied by mass spectrometry and fast ICCD imaging. The deposited films have been analysed by X-ray diffraction, scanning electron microscopy and electric resistance measurements. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：522 / 526

页数：5

共 7 条

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Chrisey D. B., 1994, PULSED LASER DEPOSIT

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