Electroless silver deposition in 100 nm silicon structures

被引:34
作者
ten Kortenaar, MV [1 ]
de Goeij, JJM
Kolar, ZI
Frens, G
Lusse, PJ
Zuiddam, MR
van der Drift, E
机构
[1] Delft Univ Technol, Phys Chem Lab, Fac Appl Nat Sci, NL-2628 BL Delft, Netherlands
[2] Delft Univ Technol, Interfac Reactor Inst, Dept Radiochem, NL-2629 JB Delft, Netherlands
[3] Delft Univ Technol, DIMES, NL-2628 CT Delft, Netherlands
关键词
D O I
10.1149/1.1344536
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
A new and simple method is described to plate silicon structures with metallic silver for ultralarge-scale integration in dimensions down to 100 nm at an aspect ratio of 4.25. The silver deposition is initiated by an exchange reaction of silicon with silver ions, and the subsequent layer growth of the activated wafers occurs by electroless plating from supersaturated aqueous silver salt solutions at pH similar to 11. No extra reducing agents are needed since silver ions are reduced at the catalytic silver surface by hydroxyl ions. The "spontaneous" ion-metal transition only proceeds at pH similar to 11 and is likely mediated by the formation of subnanometer-sized [Ag-4(OH)(2)](2+) clusters. The silver plating proceeds more easily in smaller structures and yields void-free, crystallized deposits. (C) 2000 The Electrochemical Society. S0013-4651(00)02-082-6. All rights reserved.
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页码:C28 / C33
页数:6
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