Nanostructuring of the Cu(001) surface by ion bombardment: A STM study

被引：86

作者：

Ritter, M ^{[1
]}

Stindtmann, M ^{[1
]}

Farle, M ^{[1
]}

Baberschke, K ^{[1
]}

机构：

[1] FREE UNIV BERLIN,INST EXPTL PHYS,D-14195 BERLIN,GERMANY

来源：

SURFACE SCIENCE | 1996年 / 348卷 / 03期

关键词：

Cu(001); ion beam bombardment; scanning tunneling microscopy;

D O I：

10.1016/0039-6028(95)01024-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A detailed investigation of the effects of ion bombardment and thermal treatment on the topography of Cu(001) surfaces is presented. By means of 400 eV Ar+ bombardment (flux = 6 X 10(12) ions/cm(2) a) at 300 K rectangularly shaped vacancy islands are created. These wells are on average 5 atomic layers deep, typically 20 nm wide at the top and regularly spaced about 27 nm apart. The dependence of this periodic well structure on the ion beam parameters and thermal treatment is discussed. Annealing the crystal to 370 K completely flattens this structure and the smooth topography of the clean unbombarded Cu(001) surface is recovered. We also present evidence that pinning of step flow at crystal defects or contamination on the order of 10(-4) leads to much larger terrace sizes than would be expected from the miscut of the surface.

引用

页码：243 / 252

页数：10

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