Reduction of the internal electric field in wurtzite a-plane GaN self-assembled quantum dots -: art. no. 011101

被引：31

作者：

Garro, N

Cros, A

Budagosky, JA

Cantarero, A

Vinattieri, A

Gurioli, M

Founta, S

Mariette, H

Daudin, B

机构：

[1] INFM, I-50019 Sesto Fiorentino, Italy

[2] Univ Florence, Dept Phys, I-50019 Sesto Fiorentino, Italy

[3] Univ Florence, LENS, I-50019 Sesto Fiorentino, Italy

[4] CEA, Dept Rech Fondamentals Mat Condensee, CEA CNRS Grp Nanophy & Semicond, F-38054 Grenoble, France

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 01期

关键词：

D O I：

10.1063/1.1977210

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a study of the emission of GaN/AlN self-assembled quantum dots grown on a-plane 6H-SiC showing evidence of the suppression of the internal electric field. The strain in dots and barriers is determined by means of Raman scattering and the induced piezoelectric polarizations are estimated. These reveal a compensation of the spontaneous polarization and justify the lack of a quantum confined Stark effect found in the photoluminescence spectra. Strain effects and strong confinement are responsible for the partial depolarization of the emission and its energy dependence. (c) 2005 American Institute of Physics.

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页数：3

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