New process for high optical quality InAs quantum dots grown on patterned GaAs(001) substrates

被引：22

作者：

Alonso-Gonzalez, Pablo

Gonzalez, Luisa

Gonzalez, Yolanda

Fuster, David

Fernandez-Martinez, Ivan

Martin-Sanchez, Javier

Abelmann, Leon

机构：

[1] CSIC, CNM, Inst Microelect, Madrid 28760, Spain

[2] Univ Twente, SMI, MESA & Inst Nanotechnol, NL-7500 AE Enschede, Netherlands

来源：

NANOTECHNOLOGY | 2007年 / 18卷 / 35期

关键词：

D O I：

10.1088/0957-4484/18/35/355302

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This work presents a selective ultraviolet ( UV)-ozone oxidation-chemical etching process that has been used, in combination with laser interference lithography ( LIL), for the preparation of GaAs patterned substrates. Further molecular beam epitaxy ( MBE) growth of InAs results in ordered InAs/GaAs quantum dot ( QD) arrays with high optical quality from the first layer of QDs formed on the patterned substrate. The main result is the development of a patterning technology that allows the engineering of customized geometrical displays of QDs with the same optical quality as those formed spontaneously on flat non-patterned substrates.

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页数：4

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