Electron transport in metallic dot arrays: Effect of a broad dispersion in the tunnel junction dimensions

被引:25
作者
Cordan, AS
Goltzene, A
Herve, Y
Mejias, M
Vieu, C
Launois, H
机构
[1] ENSPS, ERM, PHASE, CNRS, F-67400 Illkirch, France
[2] CNRS, Microstruct & Microelect Lab, F-92225 Bagneux, France
关键词
D O I
10.1063/1.368554
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have shown that for a one-dimensional multijunction array with a broad junction length distribution, we can increase the mean threshold voltage V-th for a given maximal tunnel resistance without increasing the scatter of V-th. For two-dimensional arrays we can increase strongly the output of devices which do not behave as open circuits, without any loss on the scatter on V-th, and still increase the latter with respect to a single-island device. The experimental background which justified the calculation will be described, as our model needs the experimental distribution of the island dimensions and junction lengths. Such a result may either show a way to increase the threshold voltages for a given technology, or allow for larger and therefore more controllable dimensions, or even extend the choice of materials. (C) 1998 American Institute of Physics. [S0021-8979(98)05819-8]
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页码:3756 / 3763
页数:8
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