Direct synthesis of high-quality single-walled carbon nanotubes on silicon and quartz substrates

被引:189
作者
Murakami, Y [1 ]
Miyauchi, Y [1 ]
Chiashi, S [1 ]
Maruyama, S [1 ]
机构
[1] Univ Tokyo, Dept Mech Engn, Bunkyo Ku, Tokyo 1138656, Japan
基金
日本学术振兴会;
关键词
D O I
10.1016/S0009-2614(03)01094-7
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A new technique of synthesizing high-quality single-walled carbon nanotubes (SWNTs) directly on the surface of silicon and quartz substrates has been developed by means of the low-temperature catalytic CVD method using ethanol. The proposed method does not employ conventional deposition/sputtering for the mounting of catalytic metals on the substrates, but it adopts an easy and costless liquid-based dip-coat approach without need of support/underlayer materials that were often used in previous studies. The substrate surface is blackened with a uniform layer of SWNTs after the CVD at an optimum condition. The optical absorption of 'as-grown' SWNTs has first been measured using thereby prepared SWNT-synthesized quartz substrate. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:49 / 54
页数:6
相关论文
共 24 条
[1]   Synergism of Co and Mo in the catalytic production of single-wall carbon nanotubes by decomposition of CO [J].
Alvarez, WE ;
Kitiyanan, B ;
Borgna, A ;
Resasco, DE .
CARBON, 2001, 39 (04) :547-558
[2]   Gas-phase production of carbon single-walled nanotubes from carbon monoxide via the HiPco process: A parametric study [J].
Bronikowski, MJ ;
Willis, PA ;
Colbert, DT ;
Smith, KA ;
Smalley, RE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2001, 19 (04) :1800-1805
[3]   Directed growth of free-standingsingle-walled carbon nanotubes [J].
Cassell, AM ;
Franklin, NR ;
Tombler, TW ;
Chan, EM ;
Han, J ;
Dai, HJ .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1999, 121 (34) :7975-7976
[4]   Combinatorial optimization of heterogeneous catalysts used in the growth of carbon nanotubes [J].
Cassell, AM ;
Verma, S ;
Delzeit, L ;
Meyyappan, M ;
Han, J .
LANGMUIR, 2001, 17 (02) :260-264
[5]   Influence of iron-silicon interaction on the growth of carbon nanotubes produced by chemical vapor deposition [J].
de los Arcos, T ;
Vonau, F ;
Garnier, MG ;
Thommen, V ;
Boyen, HG ;
Oelhafen, P ;
Düggelin, M ;
Mathis, D ;
Guggenheim, R .
APPLIED PHYSICS LETTERS, 2002, 80 (13) :2383-2385
[6]   Multilayered metal catalysts for controlling the density of single-walled carbon nanotube growth [J].
Delzeit, L ;
Chen, B ;
Cassell, A ;
Stevens, R ;
Nguyen, C ;
Meyyappan, M .
CHEMICAL PHYSICS LETTERS, 2001, 348 (5-6) :368-374
[7]   Patterned growth of single-walled carbon nanotubes on full 4-inch wafers [J].
Franklin, NR ;
Li, YM ;
Chen, RJ ;
Javey, A ;
Dai, HJ .
APPLIED PHYSICS LETTERS, 2001, 79 (27) :4571-4573
[8]   Chemical vapor deposition of single-wall carbon nanotubes on iron-film-coated sapphire substrates [J].
Hongo, H ;
Yudasaka, M ;
Ichihashi, T ;
Nihey, F ;
Iijima, S .
CHEMICAL PHYSICS LETTERS, 2002, 361 (3-4) :349-354
[9]   SINGLE-SHELL CARBON NANOTUBES OF 1-NM DIAMETER [J].
IIJIMA, S ;
ICHIHASHI, T .
NATURE, 1993, 363 (6430) :603-605
[10]   Structural (n, m) determination of isolated single-wall carbon nanotubes by resonant Raman scattering [J].
Jorio, A ;
Saito, R ;
Hafner, JH ;
Lieber, CM ;
Hunter, M ;
McClure, T ;
Dresselhaus, G ;
Dresselhaus, MS .
PHYSICAL REVIEW LETTERS, 2001, 86 (06) :1118-1121