The production of vacancies in type Ib diamond

被引：19

作者：

Collins, AT ^{[1
]}

Dahwich, A ^{[1
]}

机构：

[1] Kings Coll London, Wheatstone Phys Lab, London WC2R 2LS, England

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2003年 / 15卷 / 37期

关键词：

D O I：

10.1088/0953-8984/15/37/L06

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Optical absorption measurements on different growth sectors of a polished slice of electron-irradiated type Ib synthetic diamond show that the vacancy concentration is almost four times higher in the high-nitrogen {111} sectors than in the low-nitrogen {115} sectors. Evidence is presented to show that the self-interstitials are trapped by nitrogen, thereby reducing the amount of correlated recombination with vacancies which occurs in the absence of nitrogen.

引用

页码：L591 / L596

页数：6