CVD of CuGaSe2 for thin film solar cells with various transport agents

被引：15

作者：

Fischer, D ^{[1
]}

Meyer, N ^{[1
]}

Kuczmik, M ^{[1
]}

Beck, M ^{[1
]}

Jäger-Waldau, A ^{[1
]}

Lux-Steiner, MC ^{[1
]}

机构：

[1] Hahn Meitner Inst Kernforsch Berlin GmbH, D-14109 Berlin, Germany

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2001年 / 67卷 / 1-4期

关键词：

CuGaSe2; CVD; thin film solar cells;

D O I：

10.1016/S0927-0248(00)00269-5

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Chemical vapor deposition (CVD) in an open tube system was employed to deposit single-phase CuGaSe2 thin films on plain and Mo-coated glass substrates. The use of HCl and ternary CuGaSe2 source material resulted in non-stoichiometric volatilization of the source material. The use of binary source materials - Cu2Se and Ga2Se3 - in combination with I-2 and HCl as the respective transport agents yielded single-phase CuGaSe2 thin films while the source materials were volatilized stoichiometrically. Mo/CuGaSe2/CdS/ZnO devices were fabricated from these samples exhibiting an open-circuit voltages up to V-oc = 853 mV. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：105 / 112

页数：8

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