Characterization of proton damage in light-emitting diodes

被引：30

作者：

Johnston, AH ^{[1
]}

Miyahira, TF ^{[1
]}

机构：

[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2000年 / 47卷 / 06期

关键词：

D O I：

10.1109/23.903799

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Proton damage is investigated for several types of modern light-emitting diodes (LEDs), examining the damage from the standpoint of older models based on lifetime degradation;as well as the simpler method of normalized degradation. An empirical model is developed to describe injection-enhanced annealing in amphoterically doped LEDs. Experimental results oh "aged" devices show that wearout degradation does not decrease the sensitivity of de,ices to radiation damage.

引用

页码：2500 / 2507

页数：8

共 18 条

[1]

ANSPAUSH BE, 1996, GAAS SOLAR CELL HDB

[2] COMPARISON OF GAMMA-IRRADIATION-INDUCED DEGRADATION IN AMPHOTERICALLY SI-DOPED GAAS LEDS AND ZN-DIFFUSED GAAS LEDS [J].