CPP magnetoresistance of magnetic multilayers: mean-free-path is not the culprit
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作者:
Eid, K
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机构:Michigan State Univ, NSF, Ctr Fundamental Mat Res, Dept Phys & Astron, E Lansing, MI 48824 USA
Eid, K
Portner, D
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机构:Michigan State Univ, NSF, Ctr Fundamental Mat Res, Dept Phys & Astron, E Lansing, MI 48824 USA
Portner, D
Loloee, R
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机构:Michigan State Univ, NSF, Ctr Fundamental Mat Res, Dept Phys & Astron, E Lansing, MI 48824 USA
Loloee, R
Pratt, WP
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机构:Michigan State Univ, NSF, Ctr Fundamental Mat Res, Dept Phys & Astron, E Lansing, MI 48824 USA
Pratt, WP
Bass, J
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Michigan State Univ, NSF, Ctr Fundamental Mat Res, Dept Phys & Astron, E Lansing, MI 48824 USAMichigan State Univ, NSF, Ctr Fundamental Mat Res, Dept Phys & Astron, E Lansing, MI 48824 USA
Bass, J
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机构:
[1] Michigan State Univ, NSF, Ctr Fundamental Mat Res, Dept Phys & Astron, E Lansing, MI 48824 USA
[2] Michigan State Univ, Ctr Sensor Mat, E Lansing, MI 48824 USA
The series resistor and Valet-Fert models widely used to describe the current-perpendicular-to-plane (CPP) magnetoresistances of ferromagnetic/non-magnetic (F/N) metal multilayers were recently claimed to apply only for mean-free paths shorter than layer thicknesses; otherwise the mean-free-path was claimed to be an important length scale in the CPP-MR. Contradicting these claims, we show that the behaviors on which they were based do not change when the mean-free path in the N-layer is reduced from about five times to one-fifth its layer thickness. Part of these behaviors can be ascribed to finite spin-memory-loss (spin-flipping) in the F and N metals and the rest might be due to spin flipping at F/N interfaces. (C) 2001 Elsevier Science B.V. All rights reserved.