Submicrometer shadow mask fabricated by anisotropic wet etching and focused ion beam techniques for nanofabrication in UHV

被引：2

作者：

Sheng, H ^{[1
]}

Fujita, D ^{[1
]}

Ohgi, T ^{[1
]}

Okamoto, H ^{[1
]}

Nejoh, H ^{[1
]}

机构：

[1] Natl Res Inst Met, Tsukuba, Ibaraki 305, Japan

来源：

MODERN PHYSICS LETTERS B | 1998年 / 12卷 / 14-15期

关键词：

D O I：

10.1142/S0217984998000706

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed a new method for fabricating a silicon submicrometer shadow mask for nanofabrication in ultra-high vacuum. Combining KOH anisotropic wet etching, electron beam lithography, reactive ion etching and focused ion beam techniques, a pattern size of 2.5 x 2.5 mm(2) and opaque part about 1 mu m can be obtained.

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收藏

页码：597 / 605

页数：9

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