Flexural phonons in free-standing graphene

被引：213

作者：

Mariani, Eros ^{[1
]}

von Oppen, Felix ^{[1
]}

机构：

[1] Free Univ Berlin, Inst Theoret Phys, D-14195 Berlin, Germany

来源：

PHYSICAL REVIEW LETTERS | 2008年 / 100卷 / 07期

关键词：

D O I：

10.1103/PhysRevLett.100.076801

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Rotation and reflection symmetries impose that out-of-plane (flexural) phonons of freestanding graphene membranes have a quadratic dispersion at long wavelength and can be excited by charge carriers in pairs only. As a result, we find that flexural phonons dominate the phonon contribution to the resistivity rho below a crossover temperature T-x where we obtain an anomalous temperature dependence rho proportional to T(5/2)lnT. The logarithmic factor arises from renormalizations of the flexural-phonon dispersion due to coupling between bending and stretching degrees of freedom of the membrane.

引用

页数：4

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