Layered ruthenium oxides: From band metal to Mott insulator

被引：94

作者：

Puchkov, AV ^{[1
]}

Schabel, MC

Basov, DN

Startseva, T

Cao, G

Timusk, T

Shen, ZX

机构：

[1] Stanford Univ, Dept Appl Phys, Stanford, CA 94305 USA

[2] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA

[3] McMaster Univ, Dept Phys & Astron, Hamilton, ON L8S 4M1, Canada

[4] Florida State Univ, Natl High Magnet Field Lab, Tallahassee, FL 32306 USA

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 81卷 / 13期

关键词：

D O I：

10.1103/PhysRevLett.81.2747

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present results of the first optical and angle-resolved photoemission study on a layered ruthenium oxide system with various Ca/Sr substitution levels. Using two-plane (ST1-xCax)(3)RU2O7 and one-plane Ca2RuO4, crystals we were able to study evolution of the electronic properties in a range from a band metal (Sr3RU2O7) to a "bad" metal (Ca3Ru2O7) to a Mott-Hubbard insulator (Ca2RuO4). Apart from a Mott-Hubbard metal-insulator transition (MIT), we have uncovered a qualitative change of the electronic properties at a critical x = 0.33. We suggest that the latter is a result of a quantum phase transition into an antiferromagnetic phase that precedes the real Mott-Hubbard MIT. [S0031-9007(98)07196-8].

引用

页码：2747 / 2750

页数：4

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