From SOI materials to innovative devices

被引：21

作者：

Allibert, F

Ernst, T

Pretet, J

Hefyene, N

Perret, C

Zaslavsky, A

Cristoloveanu, S

机构：

[1] ENSERG, UMR CNRS & INPG, Lab Phys, F-38016 Grenoble 1, France

[2] SOITEC SA, Chemin Franques, F-38926 Crolles, France

[3] STMircoelect, F-38920 Crolles, France

[4] DMEL, LETI, F-38054 Grenoble 9, France

来源：

SOLID-STATE ELECTRONICS | 2001年 / 45卷 / 04期

关键词：

D O I：

10.1016/S0038-1101(01)00074-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Novel device architectures and materials are required to extend the limits of ULSI microelectronics. Recent properties of UNIBOND(R) and SOS substrates, determined with the pseudo-MOSFET technique are described. The discussion of advanced SOI devices includes two basic aspects: the scaling of conventional MOSFETs and the design of alternative structures. We discuss the effects resulting from the reduction in channel width, length and thickness and present the merits of more innovative transistors with ground-plane, dynamic-threshold or double-gate. (C) 2001 Published by Elsevier Science Ltd.

引用

页码：559 / 566

页数：8

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