Dynamic threshold-voltage MOSFET (DTMOS) for ultra-low voltage VLSI

In this paper, we propose a novel operation of a MOSFET that is suitable for ultra-low voltage (0.6 V and below) VLSI circuits, Experimental demonstration was carried out in a Silicon-On-Insulator (SOI) technology, In this device, the threshold voltage of the device is a function of its gate voltage, i.e., as the gate voltage increases the threshold voltage (V-t) drops resulting in a much higher current drive than standard MOSFET for low-power supply voltages. On the other hand, V-t is high at V-gs = 0, therefore the leakage current is low. We provide extensive experimental results and two-dimensional (2-D) device and mixed-mode simulations to analyze this device and compare its performance with a standard MOSFET. These results verify excellent inverter de characteristics down to V-dd = 0.2 V, and good ring oscillator performance down to 0.3 V for Dynamic Threshold-Voltage MOSFET (DTMOS).