Influence of dc magnetron sputtering parameters on surface morphology of indium tin oxide thin films

被引:96
作者
Jung, YS
Lee, DW
Jeon, DY
机构
[1] Samsung Corning, R&D Ctr, Gumi 730725, Kyoung Buk, South Korea
[2] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
关键词
indium tin oxide; sputtering; morphology; atomic force microscopy;
D O I
10.1016/S0169-4332(03)00862-6
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Indium tin oxide (ITO) thin films were prepared by dc magnetron sputtering deposition on glass substrates under different process conditions. The surface morphology was monitored using atomic force microscopy (AFM) and scanning electron microscopy (SEM). The change in surface morphology of ITO films was discussed in terms of crystallographic orientation and grain size. The crystallographic orientations and the grain sizes of the samples significantly changed with different sputtering parameters. Moderate ranges of pressure and power density, less amounts of additional oxygen gas, and higher substrate temperatures, where adatoms are expected to have higher mobility, resulted in a rougher surface. Under those conditions, the domains had more mixed orientations, and the average sizes of grains were larger. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:136 / 142
页数:7
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