Stranski-Krastanov growth of InAs quantum dots with narrow size distribution

被引：159

作者：

Yamaguchi, K ^{[1
]}

Yujobo, K ^{[1
]}

Kaizu, T ^{[1
]}

机构：

[1] Univ Electrocommun, Dept Elect Engn, Chofu, Tokyo 1828585, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2000年 / 39卷 / 12A期

关键词：

quantum dot; InAs; molecular beam epitaxy; Stranski-Krastanov growth mode; self-organization; surface migration; arsenic pressure; size distribution;

D O I：

10.1143/JJAP.39.L1245

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Coherently strained InAs quantum dots (QDs) with narrow inhomogeneous broadening were grown by molecular beam epitaxy (MBE) using the Stranski-Krastanov (SK) growth mode. The increase in the InAs dot size and decrease in the dot density were induced by surface migration enhancement due to the low arsenic pressure below 6 x 10(-7) Torr. In addition, the low arsenic pressure and the low growth rate produced the self size-limiting effect, which was attributed to the inhibition of indium incorporation. As a result, the narrowest photoluminescence (PL) linewidth of 18.6 meV (14 K) was successfully obtained from the single InAs/GaAs QD layer.

引用

页码：L1245 / L1248

页数：4

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