Stress-induced large-area lift-off of crystalline Si films

被引：100

作者：

Dross, F. ^{[1
]}

Robbelein, J. ^{[1
]}

Vandevelde, B. ^{[1
]}

Van Kerschaver, E. ^{[1
]}

Gordon, I. ^{[1
]}

Beaucarne, G. ^{[1
]}

Poortmans, J. ^{[1
]}

机构：

[1] IMEC VZW, B-3001 Louvain, Belgium

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2007年 / 89卷 / 01期

关键词：

D O I：

10.1007/s00339-007-4195-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A new implantation-free lift-off process is presented. We deposit a layer with mismatched thermal expansion coefficient with respect to the substrate. Upon cooling, the differential contraction induces a large stress field which is released by the initiation and the propagation of a crack parallel to the surface. The principle is demonstrated on both single and multi-crystalline silicon. Films with an area of 25 cm(2) and a thickness of 30-50 mu m have been obtained. Some Si layers were further processed into solar cells. An energy conversion efficiency of 9.9% was reached on a 1 cm(2) sample.

引用

页码：149 / 152

页数：4

共 11 条

[1] Review of layer transfer processes for crystalline thin-film silicon solar cells [J].