Nonlinear polymer-clad silicon slot waveguide modulator with a half wave voltage of 0.25 V

被引：182

作者：

Baehr-Jones, Tom ^{[1
]}

Penkov, Boyan ^{[1
]}

Huang, Jingqing ^{[1
]}

Sullivan, Phil ^{[1
]}

Davies, Joshua ^{[1
]}

Takayesu, Jocelyn ^{[1
]}

Luo, Jingdong ^{[1
]}

Kim, Tae-Dong ^{[1
]}

Dalton, Larry ^{[1
]}

Jen, Alex ^{[1
]}

Hochberg, Michael ^{[1
]}

Scherer, Axel ^{[1
]}

机构：

[1] Univ Washington, Dept Elect Engn, Paul Akllen Ctr, Seattle, WA 98195 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 16期

关键词：

D O I：

10.1063/1.2909656

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on an electro-optic modulator fabricated from a silicon slot waveguide and clad in a nonlinear polymer. In this geometry, the electrodes form parts of the waveguide, and the modulator driving voltage drops across a 120 nm slot. As a result, a half wave voltage of 0.25 V is achieved near 1550 nm. This is one of the lowest values for any modulator obtained to date. As the nonlinear polymers are extremely resistive, our device also has the advantage of drawing almost no current, suggesting this type of modulator could operate at exceedingly low power. (c) 2008 American Institute of Physics.

引用

页数：3

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