1.55 mu m polarisation insensitive InGaAsP strained MQW optical amplifier integrated with short spot-size converters

被引：11

作者：

Sigogne, D ^{[1
]}

Ougazzaden, A ^{[1
]}

Meichenin, D ^{[1
]}

Mersali, B ^{[1
]}

Carenco, A ^{[1
]}

Simon, JC ^{[1
]}

Valiente, I ^{[1
]}

Vassallo, C ^{[1
]}

Billes, L ^{[1
]}

机构：

[1] CNET LANNION,FRANCE TELECOM,F-22307 LANNION,FRANCE

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 15期

关键词：

semiconductor optical amplifiers; semiconductor; quantum wells;

D O I：

10.1049/el:19960904

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The use of a 16 period strained multiquantum-well (MQW) structure associated with both tapers and windows yields high performance polarisation insensitive optical amplification. 23 dB fibre to fibre gain with small numerical aperture lensed fibres was achieved at 1.55 mu m for 150 mA injected current with less than 0.5 dB ripple, and polarisation sensitivity lower than 1 dB. Output beams show reproducible reduced circular far-field divergence. These characteristics are of great interest for practical use of this component in a large number of applications.

引用

页码：1403 / 1405

页数：3

共 6 条

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