a-SiGe:H materials and devices deposited by hot wire CVD using a tantalum filament operated at low temperature

被引:2
作者
Mahan, AH [1 ]
Xu, Y [1 ]
Gedvilas, LM [1 ]
Reedy, RC [1 ]
Williamson, DL [1 ]
Datta, S [1 ]
Cohen, JD [1 ]
Yan, B [1 ]
Branz, HM [1 ]
机构
[1] NREL, Golden, CO 80401 USA
来源
Conference Record of the Thirty-First IEEE Photovoltaic Specialists Conference - 2005 | 2005年
关键词
D O I
10.1109/PVSC.2005.1488401
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
We report the deposition of improved hydrogenated amorphous silicon germanium (a-SiGe:H) films by the Hot Wire CVD (HWCVD) technique using a tantalum filament operating at a low temperature. We gauge the material quality of the aSiGe:H films by comparing infrared, small angle x-ray scattering (SAXS), photocapacitance and conductivity measurements to earlier results, and fabricate single junction n-i-p solar cell devices using these i-layers.
引用
收藏
页码:1397 / 1400
页数:4
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