EVIDENCE FOR MICROSTRUCTURE IN GLOW-DISCHARGE HYDROGENATED AMORPHOUS SI-C ALLOYS

[1] ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS SILICON-CARBIDE, SILICON-NITRIDE AND GERMANIUM CARBIDE PREPARED BY GLOW-DISCHARGE TECHNIQUE [J]. PHILOSOPHICAL MAGAZINE, 1977, 35 (01): : 1 - 16

[2] HYDROGEN EVOLUTION FROM A-SI-C-H AND A-SI-GE-H ALLOYS [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 857 - 860

[3] BEYER W, 1985, MATERIALS ISSUES APP, V49, P189

[4] BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556

[5] ELECTRONIC AND OPTICAL-PROPERTIES OF GLOW-DISCHARGE AMORPHOUS-SILICON CARBON ALLOYS [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1984, 49 (05): : 489 - 501

[6] VIBRATIONAL-SPECTRA OF HYDROGEN IN SILICON AND GERMANIUM [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 118 (02): : 463 - 481

[7] FIORINI P, 1985, MATER RES SOC S P, V49, P195

[8] HAMAKAWA Y, 1982, 16TH P IEEE PHOT SPE, P679

[9] EFFECTS OF THE SUBSTRATE POTENTIAL ON THE INCORPORATION MANNER OF HYDROGEN AND IMPURITY IN ALPHA-SI-H FILMS [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 631 - 634

[10] DIRECT MEASUREMENT OF GAP-STATE ABSORPTION IN HYDROGENATED AMORPHOUS-SILICON BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY [J]. PHYSICAL REVIEW B, 1982, 25 (08): : 5559 - 5562

[1] ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS SILICON-CARBIDE, SILICON-NITRIDE AND GERMANIUM CARBIDE PREPARED BY GLOW-DISCHARGE TECHNIQUE [J]. PHILOSOPHICAL MAGAZINE, 1977, 35 (01): : 1 - 16

[2] HYDROGEN EVOLUTION FROM A-SI-C-H AND A-SI-GE-H ALLOYS [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 857 - 860

[3] BEYER W, 1985, MATERIALS ISSUES APP, V49, P189

[4] BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556

[5] ELECTRONIC AND OPTICAL-PROPERTIES OF GLOW-DISCHARGE AMORPHOUS-SILICON CARBON ALLOYS [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1984, 49 (05): : 489 - 501

[6] VIBRATIONAL-SPECTRA OF HYDROGEN IN SILICON AND GERMANIUM [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 118 (02): : 463 - 481

[7] FIORINI P, 1985, MATER RES SOC S P, V49, P195

[8] HAMAKAWA Y, 1982, 16TH P IEEE PHOT SPE, P679

[9] EFFECTS OF THE SUBSTRATE POTENTIAL ON THE INCORPORATION MANNER OF HYDROGEN AND IMPURITY IN ALPHA-SI-H FILMS [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 631 - 634

[10] DIRECT MEASUREMENT OF GAP-STATE ABSORPTION IN HYDROGENATED AMORPHOUS-SILICON BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY [J]. PHYSICAL REVIEW B, 1982, 25 (08): : 5559 - 5562