ELECTRONIC AND OPTICAL-PROPERTIES OF GLOW-DISCHARGE AMORPHOUS-SILICON CARBON ALLOYS

被引：70

作者：

BULLOT, J ^{[1
]}

GAUTHIER, M ^{[1
]}

SCHMIDT, M ^{[1
]}

CATHERINE, Y ^{[1
]}

ZAMOUCHE, A ^{[1
]}

机构：

[1] LAB PHYS CORPUS, ERA 924, F-44072 NANTES, FRANCE

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1984年 / 49卷 / 05期

关键词：

D O I：

10.1080/13642818408227657

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：489 / 501

页数：13

相关论文

共 32 条

[1] ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS SILICON-CARBIDE, SILICON-NITRIDE AND GERMANIUM CARBIDE PREPARED BY GLOW-DISCHARGE TECHNIQUE
ANDERSON, DA
SPEAR, WE
[J]. PHILOSOPHICAL MAGAZINE, 1977, 35 (01): : 1 - 16
[2] ELECTRONIC-PROPERTIES OF HYDROGENATED AMORPHOUS SILICON-GERMANIUM ALLOYS
BULLOT, J
GALIN, M
GAUTHIER, M
BOURDON, B
BOURDON, B
[J]. JOURNAL DE PHYSIQUE, 1983, 44 (06): : 713 - 721
[3] Carlson D. E., 1979, Amorphous semiconductors, P287
[4] REACTIVE PLASMA DEPOSITED SIXCYHZ FILMS
CATHERINE, Y
TURBAN, G
[J]. THIN SOLID FILMS, 1979, 60 (02) : 193 - 200
[5] REACTION-MECHANISMS IN PLASMA DEPOSITION OF SIXC1-X-H FILMS
CATHERINE, Y
TURBAN, G
GROLLEAU, B
[J]. THIN SOLID FILMS, 1981, 76 (01) : 23 - 33
[6] INFRARED-ABSORPTION OF HYDROGENATED AMORPHOUS SI-C AND GE-C FILMS
CATHERINE, Y
TURBAN, G
[J]. THIN SOLID FILMS, 1980, 70 (01) : 101 - 104
[7] EFFECT OF HYDROGENATION ON THE ELECTRICAL-CONDUCTIVITY OF AMORPHOUS SILICON-CARBIDE
DUTTA, R
BANERJEE, PK
MITRA, SS
[J]. SOLID STATE COMMUNICATIONS, 1982, 42 (03) : 219 - 222
[8] PHOTO-LUMINESCENCE IN AMORPHOUS SYSTEM SIXC1-X
ENGEMANN, D
FISCHER, R
KNECHT, J
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (09) : 567 - 568
[9] GALIN M, 1982, THESIS ORSAY
[10] PROPERTIES OF HYDROGENATED AMORPHOUS-CARBON FILMS AND THE EFFECTS OF DOPING
JONES, DI
STEWART, AD
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 46 (05): : 423 - 434

← 1 2 3 4 →