Anomalous critical current in double-barrier Nb/Al-AlOx-Al-AlOx-Nb devices

被引：28

作者：

Nevirkovets, IP ^{[1
]}

Ketterson, JB

Lomatch, S

机构：

[1] Northwestern Univ, Dept Phys & Astron, Evanston, IL 60208 USA

[2] Northwestern Univ, Dept Elect & Comp Engn, Evanston, IL 60208 USA

[3] Natl Acad Sci Ukraine, Inst Phys Met, UA-252680 Kiev, Ukraine

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 11期

关键词：

D O I：

10.1063/1.123637

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Double-barrier Nb/Al-AlOx-Al-AlOx-Nb devices with a "dirty'' middle Al layer were fabricated and investigated. An anomalously large Josephson critical current at low temperatures and a nonmonotonic dependence of the device resistance on the thickness of the middle Al layer were found. (C) 1999 American Institute of Physics. [S0003-6951(99)02011-2].

引用

页码：1624 / 1626

页数：3

共 14 条

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[13]

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JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (9AB) :L1157-L1160

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