Dynamic behavior of carbon ultrathin film formation

被引:16
作者
Durand, HA [1 ]
Sekine, K [1 ]
Etoh, K [1 ]
Ito, K [1 ]
Kataoka, I [1 ]
机构
[1] Japan Aviat Elect Ind Ltd, Cent Res Lab, Akishima, Tokyo 196, Japan
关键词
D O I
10.1063/1.368420
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present here investigations of the initial steps in the formation of ultrathin carbon films on a carbon highly oriented pyrolytic graphite substrate by the deposition of low energy carbon ions at temperatures from ambient to 300 degrees C. We used an ultrahigh vacuum scanning tunneling microscopy to observe the growth of these films. At a nanometer scale, we revealed a roughening transition of the island's growth, from lateral to tridimensional growth. Also, here we introduce the scaling analysis of roughness to describe the evolution of the morphology of the interface during growth. The ultrathin film formation mechanisms are studied as a function of ion density and annealing. (C) 1998 American Institute of Physics. [S0021-8979(98)01416-9].
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收藏
页码:2591 / 2596
页数:6
相关论文
共 33 条
[1]   Electronic structure of amorphous silicon nanoclusters [J].
Allan, G ;
Delerue, C ;
Lannoo, M .
PHYSICAL REVIEW LETTERS, 1997, 78 (16) :3161-3164
[2]   Surface diffusion of Ge on Si(111): Experiment and simulation [J].
Allen, CE ;
Ditchfield, R ;
Seebauer, EG .
PHYSICAL REVIEW B, 1997, 55 (19) :13304-13313
[3]  
[Anonymous], SITZUNGSBER AK 2B MN
[4]   Optical investigation of growth mode of Ge thin films on Si(110) substrates [J].
Arai, J ;
Ohga, A ;
Hattori, T ;
Usami, N ;
Shiraki, Y .
APPLIED PHYSICS LETTERS, 1997, 71 (06) :785-787
[5]  
BARABASI AL, 1995, FRACTAL CONCEPTS SUR, P23
[6]   Self-similar spatial ordering of clusters on surfaces during Ostwald ripening [J].
Carlow, GR ;
ZinkeAllmang, M .
PHYSICAL REVIEW LETTERS, 1997, 78 (24) :4601-4604
[7]   A NEW UNIVERSALITY CLASS FOR KINETIC GROWTH - ONE-DIMENSIONAL MOLECULAR-BEAM EPITAXY [J].
DASSARMA, S ;
TAMBORENEA, P .
PHYSICAL REVIEW LETTERS, 1991, 66 (03) :325-328
[8]   SCALING OF THE ACTIVE ZONE IN THE EDEN PROCESS ON PERCOLATION NETWORKS AND THE BALLISTIC DEPOSITION MODEL [J].
FAMILY, F ;
VICSEK, T .
JOURNAL OF PHYSICS A-MATHEMATICAL AND GENERAL, 1985, 18 (02) :L75-L81
[9]   Diffusion controlled growth of metallic nanoclusters at selected surface sites [J].
Francis, GM ;
Kuipers, L ;
Cleaver, JRA ;
Palmer, RE .
JOURNAL OF APPLIED PHYSICS, 1996, 79 (06) :2942-2947
[10]  
ITO K, 1991, NUCL INSTRUM METH B, V59, P321