Ge nanostructures: average and local structure

A review of an important class of electronic materials, namely, Ge nanostructures, is given. This paper first discusses the geometrical aspects of the nanostructures, both epitaxially grown quantum dots and embedded nanocrystals. This is followed by a description of the structure. Structural techniques relying on long-range ordering, such as diffraction, are compared to methods depending on local bonding, namely Raman scattering and X-ray absorption fine structure. Merits and pitfalls of various techniques are also discussed. The review is concluded by a discussion of possible advanced applications of Ge nanostructures. (C) 2004 Kluwer Academic Publishers.