Step-induced optical anisotropy of vicinal Si(001)

被引:69
作者
Jaloviar, SG [1 ]
Lin, JL [1 ]
Liu, F [1 ]
Zielasek, V [1 ]
McCaughan, L [1 ]
Lagally, MG [1 ]
机构
[1] Univ Wisconsin, Madison, WI 53706 USA
关键词
D O I
10.1103/PhysRevLett.82.791
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
It is demonstrated, using reflectance difference spectroscopy, scanning tunneling microscopy, and low-energy electron diffraction, combined with deliberate straining of the surface, that the presence of atomic steps dramatically changes the optical anisotropy of the Si(001) surface. The step-induced reflectance difference signal originates predominately from rebonded steps and is comparable in magnitude to that of the terrace signal.
引用
收藏
页码:791 / 794
页数:4
相关论文
共 20 条
[1]   APPLICATION OF REFLECTANCE DIFFERENCE SPECTROSCOPY TO MOLECULAR-BEAM EPITAXY GROWTH OF GAAS AND ALAS [J].
ASPNES, DE ;
HARBISON, JP ;
STUDNA, AA ;
FLOREZ, LT .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03) :1327-1332
[2]   ABOVE-BANDGAP OPTICAL ANISOTROPIES IN CUBIC SEMICONDUCTORS - A VISIBLE NEAR ULTRAVIOLET PROBE OF SURFACES [J].
ASPNES, DE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (05) :1498-1506
[3]   STABILITIES OF SINGLE-LAYER AND BILAYER STEPS ON SI(001) SURFACES [J].
CHADI, DJ .
PHYSICAL REVIEW LETTERS, 1987, 59 (15) :1691-1694
[4]   STEPS ON SI(001) [J].
GRIFFITH, JE ;
KOCHANSKI, GP ;
KUBBY, JA ;
WIERENGA, PE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03) :1914-1918
[5]   SCANNING TUNNELING MICROSCOPY SCANNING TUNNELING SPECTROSCOPY OBSERVATION OF STEP STRUCTURES OF SI-(001) AND SI-(111) SURFACES [J].
IWAWAKI, F ;
TOMITORI, M ;
NISHIKAWA, O .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (02) :711-715
[6]  
JALOVIAR SG, IN PRESS
[7]   OPTICAL-DETECTION OF GROWTH OSCILLATIONS IN HIGH-VACUUM METALORGANIC VAPOR-PHASE EPITAXY [J].
JONSSON, J ;
DEPPERT, K ;
JEPPESEN, S ;
PAULSSON, G ;
SAMUELSON, L ;
SCHMIDT, P .
APPLIED PHYSICS LETTERS, 1990, 56 (24) :2414-2416
[8]   Reflectance difference spectroscopy: Experiment and theory for the model system Si(001):As and application to Si(001) [J].
Kipp, L ;
Biegelsen, DK ;
Northrup, JE ;
Swartz, LE ;
Bringans, RD .
PHYSICAL REVIEW LETTERS, 1996, 76 (15) :2810-2813
[9]   Surface-induced optical anisotropy of oxidized, clean, and hydrogenated vicinal Si(001) surfaces [J].
Mantese, L ;
Rossow, U ;
Aspnes, DE .
APPLIED SURFACE SCIENCE, 1996, 107 :35-41
[10]   SI(100) SURFACE UNDER AN EXTERNALLY APPLIED STRESS [J].
MEN, FK ;
PACKARD, WE ;
WEBB, MB .
PHYSICAL REVIEW LETTERS, 1988, 61 (21) :2469-2471