Unstable region of solid composition in ternary nitride alloys grown by metalorganic vapor-phase epitaxy

被引：48

作者：

Koukitu, A

Seki, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1996年 / 35卷 / 12B期

关键词：

GaN; unstable region; ternary nitride; equilibrium model;

D O I：

10.1143/JJAP.35.L1638

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A chemical equilibrium model is applied to analyze the growth of AlGaN, InGaN and InAIN alloys using metalorganic vapor-phase epitaxy (MOVPE). The vapor-solid distribution relationship and the phase diagram for deposition are calculated. It is shown that unstable regions of solid composition exist in InGaN and InAIN alloys. The origin of the unstable region is also discussed.

引用

页码：L1638 / L1640

页数：3

共 4 条

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[2] Thermodynamic analysis of InxGa1-xN alloy composition grown by metalorganic vapor phase epitaxy [J].

Koukitu, A ;

Takahashi, N ;

Taki, T ;

Seki, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1996, 35 (6A) :L673-L675

[3]

KOUKITU A, IN PRESS J SOLID STA

[4]

KOUKITU A, IN PRESS J CRYST GRO

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