Strain-induced changes to the electronic structure of germanium

被引：93

作者：

Tahini, H. ^{[1
]}

Chroneos, A. ^{[1
,2
]}

Grimes, R. W. ^{[1
]}

Schwingenschlogl, U. ^{[3
]}

Dimoulas, A. ^{[2
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2AZ, England

[2] NCSR Demokritos, MBE Lab, Inst Mat Sci, GR-15310 Athens, Greece

[3] KAUST, PSE Div, Thuwal 239556900, Saudi Arabia

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2012年 / 24卷 / 19期

关键词：

AUGMENTED-WAVE METHOD; BAND-STRUCTURE; GE; ALLOYS; POINTS;

D O I：

10.1088/0953-8984/24/19/195802

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Density functional theory calculations (DFT) are used to investigate the strain-induced changes to the electronic structure of biaxially strained (parallel to the (001), (110) and (111) planes) and uniaxially strained (along the [001], [110] and [111] directions) germanium (Ge). It is calculated that a moderate uniaxial strain parallel to the [111] direction can efficiently transform Ge to a direct bandgap material with a bandgap energy useful for technological applications.

引用

页数：4

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