Simulating capacitive cross-talk effects in DC-coupled hybrid silicon pixel detectors

被引:10
作者
Bonvicini, V
Pindo, M
机构
[1] UNIV MILAN, I-20133 MILAN, ITALY
[2] IST NAZL FIS NUCL, I-20133 MILAN, ITALY
关键词
D O I
10.1016/0168-9002(95)01301-6
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
An electrical model of a 5 x 5 pixel matrix has been developed. Cross-talk effects following the passage of an ionising event in the central pixel have been investigated with the help of the simulation program PSPICE; a small-signal equivalent circuit of a front-end charge sensitive preamplifier has been used for the analysis. The possibility to exploit the interpixel capacitive coupling to substantially reduce the number of readout channels, provided that a suitable analogue front-end electronics is used, has been discussed.
引用
收藏
页码:93 / 110
页数:18
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