Site-controlled InAs quantum dots on GaAs patterned using self-organized nano-channel alumina template

被引：5

作者：

Meneou, K ^{[1
]}

Tsai, CL

Zhang, ZH

Cheng, KY

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

[2] Univ Illinois, Micro & Nanotechnol Lab, Urbana, IL 61801 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2005年 / 23卷 / 03期

关键词：

D O I：

10.1116/1.1914824

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nano-pore arrays on GaAs by templated anodization of GaAs through a nano-channel alumina (NCA) membrane are reported for the first time. The NCA is formed by anodization of single-crystal aluminum grown epitaxially on a GaAs substrate. The anodization is continued into the GaAs underneath the NCA, which is anodized only at the pore bottoms of the NCA. After removal of the NCA, the nanostructured GaAs obtained is studied using scanning electron microscopy. The obtained nano-pores are 30-50 nm deep and spaced similar to 100 nm apart. Site-controlled InAs self-assembled quantum dots are demonstrated by regrowth on this nanostructured GaAs. (c) 2005 American Vacuum Society.

引用

页码：1232 / 1235

页数：4

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