Transfer of nanoporous pattern of anodic porous alumina into Si substrate

Nanohole arrays in a Si substrate with a self-ordered configuration having a 100 nm hole periodicity were fabricated by the pattern transfer of the hole configuration of anodic porous alumina. The self-ordered anodic porous alumina used as a mask was directly prepared by anodizing an aluminum film sputtered on a Si substrate. The transfer of the nanoporous pattern of anodic alumina into the Si substrate could be achieved by removing silicon oxide, which was produced by the anodic oxidation of the local part of the Si substrate underneath the barrier layer corresponding to the pore base. In addition, we confirmed that the transformation of the nanostructure of porous alumina grown on a Si substrate is comparable to the current transient during alumina film formation. (C) 2003 American Institute of Physics.