Large reduction of leakage current by graded-layer La doping in (Ba0.5, Sr0.5)TiO3 thin films

被引：41

作者：

Saha, S ^{[1
]}

Krupanidhi, SB ^{[1
]}

机构：

[1] Indian Inst Sci, Mat Res Ctr, Bangalore 560012, Karnataka, India

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 01期

关键词：

D O I：

10.1063/1.1371791

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A large reduction in the leakage current behavior in (Ba, Sr)TiO3 (BST) thin films was observed by graded-layer donor doping. The graded doping was achieved by introducing La-doped BST layers in the grown BST films. The films showed a large decrease (about six orders of magnitude) in the leakage current in comparison to undoped films at an electric field of 100 kV/cm. The large decrease in leakage current was attributed to the formation of highly resistive layers, originating from compensating defect chemistry involved for La-doped films grown in oxidizing environment. Temperature-dependent leakage-current behavior was studied to investigate the conduction mechanism and explanations of the results were sought from Poole-Frenkel conduction mechanism. (C) 2001 American Institute of Physics.

引用

页码：111 / 113

页数：3

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