Effects of sputtering power on the properties of ZnO:Ga films deposited by r.f. magnetron-sputtering at low temperature

被引：152

作者：

Yu, XH

Ma, J ^{[1
]}

Ji, F

Wang, YH

Zhang, XJ

Cheng, CF

Ma, HL

机构：

[1] Shandong Univ, Sch Phys & Microelect, Jinan 250100, Peoples R China

[2] Shandong Normal Univ, Dept Phys, Jinan 250014, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 274卷 / 3-4期

关键词：

magnetron sputtering; ZnO : Ga films; electrical and optical properties;

D O I：

10.1016/j.jcrysgro.2004.10.037

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Gallium-doped zinc oxide (ZnO:Ga) films were prepared oil glass substrates by r.f. magnetron sputtering Lit low substrate temperature. Structural, electrical and optical properties of the ZnO:Ga films were investigated in terms of the preparation conditions. The obtained films were polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the (0 0 2) crystallographic direction. The transmittance of the ZnO:Ga films in the visible range was over 85%,,. The lowest resistivity and sheet resistance for the ZnO:Ga films were about 3.9 x 10(-4) Omegacm and 4.6Omega/square, respectively. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：474 / 479

页数：6

共 19 条

[1] Influence of the deposition pressure on the properties of transparent and conductive ZnO:Ga thin-film produced by r.f. sputtering at room temperature [J].